ISSI IS29GL256 Parallel Flash Memory Devices
ISSI IS29GL256 Parallel Flash Memory Devices offer a fast page access time of 20ns with a corresponding random access time as fast as 70ns. These memory devices feature a write buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation. The IS29GL256 devices thus offer faster effective programming time than standard programming algorithms. These memory devices are ideal for embedded applications that require higher density, better performance, and low power consumption.
Features
8-word/16-byte page read buffer32-word/64-byte write buffer reduces overall programming time for multiple-word updatesSecured Silicon Sector (SSR) region
512-word/1024-byte sector for permanent, secure identification256-word Factory Locked SSR and 256-word customer locked SSRUniform 64Kword/128KByte sector architectureSuspend and resume commands for program and erase operationsWrite operation status bits indicate program and erase operation completion
512-word/1024-byte sector for permanent, secure identification256-word Factory Locked SSR and 256-word customer locked SSRUniform 64Kword/128KByte sector architectureSuspend and resume commands for program and erase operationsWrite operation status bits indicate program and erase operation completion
Specifications
Single power supply operation:2.7V to 3.6V full voltage range for read and write operationsFast access time at -40°C to +125°C:
70ns at a VCC range from 3V to 3.6V and VIO range from 3V to 3.6V1.65V to 3.6V VIO input/outputAll input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input
70ns at a VCC range from 3V to 3.6V and VIO range from 3V to 3.6V1.65V to 3.6V VIO input/outputAll input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input
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