Samsung Semiconductor - K4B4G0846R-BHMA

KEY Part #: K7359686

[24090gab krājumi]

Daļas numurs:: K4B4G0846R-BHMA

Ražotājs:: Samsung Semiconductor

Detalizēts apraksts:: 4 Gb 512M x 8 1866 Mbps 1.35 V -40 ~ 105 °C 78FBGA Mass Production.

Manufacturer's standard lead time:: Noliktavā

Glabāšanas laiks:: Viens gads

Čips no:: Honkonga

RoHS:

Apmaksas veids:

Sūtīšanas veids:

Ģimenes kategorijas:: KEY Components Co, LTD ir elektronisko komponentu izplatītājs, kurš piedāvā produktu kategorijas, ieskaitot: LPDDR3, DDR4, GDDR5, LPDDR5, SLC Nand, GDDR6, HBM Aquabolt and DDR3 ...

Konkurences priekšrocības:: We specialize in Samsung Semiconductor K4B4G0846R-BHMA electronic components. K4B4G0846R-BHMA can be shipped within 24 hours after order. If you have any demands for K4B4G0846R-BHMA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

K4B4G0846R-BHMA Produkta atribūti

Daļas numurs : K4B4G0846R-BHMA

Ražotājs : Samsung Semiconductor

Apraksts : 4 Gb 512M x 8 1866 Mbps 1.35 V -40 ~ 105 °C 78FBGA Mass Production

Sērija : DDR3

blīvums : 4 Gb

Org. : 512M x 8

ātrums : 1866 Mbps

spriegums : 1.35 V

Temp. : -40 ~ 105 °C

paka : 78FBGA

Preces statuss : Mass Production

Jaunākās ziņas

Speed for the next generation of mobile devices

How Will 5G Impact on Memory?

Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering

Evolving Mobile Solutions: Samsung at MWC 2018

Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP

Inside the building blocks of the 5G future

Samsung Rolls Out Industry’s First 8GB LPDDR4 DRAM Package

Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM

The future of NAND technology

Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology

Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day

Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology

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