| Attēls | KEY atslēgas numurs / ražotājs | Apraksts / PDF | Daudzums / RFQ |
|---|---|---|---|
 |
Samsung Semiconductor |
2 Gb 256M x 8 2133 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production. |
16996gab krājumi |
|
Samsung Semiconductor |
2 Gb 256M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production. |
22539gab krājumi |
|
Samsung Semiconductor |
2 Gb 256M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production. |
21400gab krājumi |
|
Samsung Semiconductor |
2 Gb 256M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production. |
25337gab krājumi |
|
Samsung Semiconductor |
2 Gb 256M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production. |
22178gab krājumi |
|
Samsung Semiconductor |
2 Gb 256M x 8 2133 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production. |
20824gab krājumi |
|
Samsung Semiconductor |
2 Gb 128M x 16 1600 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production. |
23528gab krājumi |
|
Samsung Semiconductor |
2 Gb 128M x 16 1866 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production. |
14868gab krājumi |
|
Samsung Semiconductor |
2 Gb 128M x 16 2133 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production. |
15955gab krājumi |
|
Samsung Semiconductor |
2 Gb 128M x 16 1866 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production. |
21119gab krājumi |
|
Samsung Semiconductor |
2 Gb 128M x 16 1866 Mbps 1.35 V -40 ~ 105 °C 96FBGA Mass Production. |
17431gab krājumi |
|
Samsung Semiconductor |
2 Gb 128M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production. |
22867gab krājumi |
|
Samsung Semiconductor |
2 Gb 128M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production. |
21752gab krājumi |
|
Samsung Semiconductor |
2 Gb 128M x 16 1600 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production. |
26091gab krājumi |
|
Samsung Semiconductor |
2 Gb 128M x 16 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production. |
24906gab krājumi |
|
Samsung Semiconductor |
2 Gb 128M x 16 2133 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production. |
19090gab krājumi |
|
Samsung Semiconductor |
4 Gb 512M x 8 1333 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production. |
19788gab krājumi |
|
Samsung Semiconductor |
4 Gb 512M x 8 1600 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production. |
14489gab krājumi |
|
Samsung Semiconductor |
4 Gb 512M x 8 1866 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production. |
25276gab krājumi |
|
Samsung Semiconductor |
4 Gb 512M x 8 2133 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production. |
16363gab krājumi |
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