Nexperia MJD31C & MJD32C 100V 3A Bipolar Transistors

Author : Nexperia Published Time : 2019-09-06
Nexperia MJD31C and MJD32C 100V 3A Bipolar Junction Transistors (BJT) offer high thermal power dissipation in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. These devices offer high energy efficiency due to low heat generation, and feature low collector emitter saturation voltage. The MJD31C and MJD32C are ideal for a wide variety of applications including linear voltage regulators, power management, and constant current drive backlighting.

Features

  • High Thermal Power Dissipation Capability
  • High Energy Efficiency Due to Low Heat Generation
  • Polarity
  • MJD32C: PNP
  • MJD31C: NPN

    Applications

  • Power Management
  • Load Switch
  • Constant Current Drive Backlighting Application

    Datasheets

    MJD31C 100V 3A NPN Power Bipolar Transistor
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