Global Power Technologies Group - GHIS200A120S3B1

KEY Part #: K6532026

GHIS200A120S3B1 Cenas (USD) [1303gab krājumi]

  • 4 pcs$153.21467

Daļas numurs:
GHIS200A120S3B1
Ražotājs:
Global Power Technologies Group
Detalizēts apraksts:
SI IGBT SIC SBD HYBRID MODULES.
Manufacturer's standard lead time:
Noliktavā
Glabāšanas laiks:
Viens gads
Čips no:
Honkonga
RoHS:
Apmaksas veids:
Sūtīšanas veids:
Ģimenes kategorijas:
KEY Components Co, LTD ir elektronisko komponentu izplatītājs, kurš piedāvā produktu kategorijas, ieskaitot: Tranzistori - IGBT - vienvietīgi, Diodes - Zener - masīvi, Tranzistori - IGBT - moduļi, Tranzistori - FET, MOSFET - vienvietīgi, Diodes - taisngrieži - masīvi, Tranzistori - īpašam nolūkam, Tranzistori - FET, MOSFET - masīvi and Tranzistori - JFET ...
Konkurences priekšrocības:
We specialize in Global Power Technologies Group GHIS200A120S3B1 electronic components. GHIS200A120S3B1 can be shipped within 24 hours after order. If you have any demands for GHIS200A120S3B1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GHIS200A120S3B1 Produkta atribūti

Daļas numurs : GHIS200A120S3B1
Ražotājs : Global Power Technologies Group
Apraksts : SI IGBT SIC SBD HYBRID MODULES
Sērija : -
Daļas statuss : Obsolete
Veids : IGBT
Konfigurācija : Half Bridge
Pašreizējais : 400A
spriegums : 1.2kV
Spriegums - izolācija : 2500Vrms
Iepakojums / lieta : Power Module

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