Attēls | KEY atslēgas numurs / ražotājs | Apraksts / PDF | Daudzums / RFQ |
---|---|---|---|
Samsung Semiconductor |
12 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production. |
16372gab krājumi |
|
Samsung Semiconductor |
12 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production. |
18111gab krājumi |
|
Samsung Semiconductor |
12 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 125 °C 200FBGA Mass Production. |
14254gab krājumi |
|
Samsung Semiconductor |
12 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production. |
16007gab krājumi |
|
Samsung Semiconductor |
12 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production. |
23219gab krājumi |
|
Samsung Semiconductor |
4 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production. |
14653gab krājumi |
|
Samsung Semiconductor |
4 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production. |
15796gab krājumi |
|
Samsung Semiconductor |
4 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 125 °C 200FBGA Mass Production. |
20969gab krājumi |
|
Samsung Semiconductor |
16 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production. |
17160gab krājumi |
|
Samsung Semiconductor |
16 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production. |
21953gab krājumi |
|
Samsung Semiconductor |
16 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production. |
17994gab krājumi |
|
Samsung Semiconductor |
16 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production. |
23172gab krājumi |
|
Samsung Semiconductor |
16 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 125 °C 200FBGA Mass Production. |
21588gab krājumi |
|
Samsung Semiconductor |
8 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production. |
24362gab krājumi |
|
Samsung Semiconductor |
8 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production. |
16747gab krājumi |
|
Samsung Semiconductor |
8 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production. |
22839gab krājumi |
|
Samsung Semiconductor |
8 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production. |
23654gab krājumi |
|
Samsung Semiconductor |
8 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 125 °C 200FBGA Mass Production. |
22586gab krājumi |
|
Samsung Semiconductor |
32 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production. |
14789gab krājumi |
|
Samsung Semiconductor |
32 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production. |
18364gab krājumi |