Samsung Semiconductor - K4A8G165WB-BCWE

KEY Part #: K7359609

[24756gab krājumi]

Daļas numurs:: K4A8G165WB-BCWE

Ražotājs:: Samsung Semiconductor

Detalizēts apraksts:: 8 Gb 512M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.

Manufacturer's standard lead time:: Noliktavā

Glabāšanas laiks:: Viens gads

Čips no:: Honkonga

RoHS:

Apmaksas veids:

Sūtīšanas veids:

Ģimenes kategorijas:: KEY Components Co, LTD ir elektronisko komponentu izplatītājs, kurš piedāvā produktu kategorijas, ieskaitot: SLC Nand, DDR3, LPDDR3, LPDDR4, GDDR5, GDDR6, LPDDR4X and HBM Flarebolt ...

Konkurences priekšrocības:: We specialize in Samsung Semiconductor K4A8G165WB-BCWE electronic components. K4A8G165WB-BCWE can be shipped within 24 hours after order. If you have any demands for K4A8G165WB-BCWE, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

K4A8G165WB-BCWE Produkta atribūti

Daļas numurs : K4A8G165WB-BCWE

Ražotājs : Samsung Semiconductor

Apraksts : 8 Gb 512M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production

Sērija : DDR4

blīvums : 8 Gb

Org. : 512M x 16

ātrums : 3200 Mbps

spriegums : 1.2 V

Temp. : 0 ~ 85 °C

paka : 96FBGA

Preces statuss : Mass Production

Jaunākās ziņas

SSDs, DRAM and gaming: Unlocking a new level of performance

Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)

Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering

High Bandwidth Memory is Catching on for Data-intensive Computing

Inside the building blocks of the 5G future

Samsung’s PM1733 SSD and High Density DIMMs Support AMD EPYC™ 7002 Series Processor

Unlocking the Power of Cloud Computing

Mass Production of Fifth-Generation V-NAND has Started

Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones

Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards

Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology

Samsung Memory Solutions for Automotive

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