Samsung Semiconductor - K4U6E3S4AM-GFCL

KEY Part #: K7359742

[20815gab krājumi]


    Daļas numurs:
    K4U6E3S4AM-GFCL
    Ražotājs:
    Samsung Semiconductor
    Detalizēts apraksts:
    16 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 95 °C 200FBGA Mass Production.
    Manufacturer's standard lead time:
    Noliktavā
    Glabāšanas laiks:
    Viens gads
    Čips no:
    Honkonga
    RoHS:
    Apmaksas veids:
    Sūtīšanas veids:
    Ģimenes kategorijas:
    KEY Components Co, LTD ir elektronisko komponentu izplatītājs, kurš piedāvā produktu kategorijas, ieskaitot: LPDDR5, GDDR6, MODULE, SLC Nand, HBM Flarebolt, GDDR5, HBM Aquabolt and LPDDR4 ...
    Konkurences priekšrocības:
    We specialize in Samsung Semiconductor K4U6E3S4AM-GFCL electronic components. K4U6E3S4AM-GFCL can be shipped within 24 hours after order. If you have any demands for K4U6E3S4AM-GFCL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4U6E3S4AM-GFCL Produkta atribūti

    Daļas numurs : K4U6E3S4AM-GFCL
    Ražotājs : Samsung Semiconductor
    Apraksts : 16 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 95 °C 200FBGA Mass Production
    Sērija : DDR3
    blīvums : 16 Gb
    Org. : x32
    ātrums : 4266 Mbps
    spriegums : 1.8 / 1.1 / 0.6 V
    Temp. : -40 ~ 95 °C
    paka : 200FBGA
    Preces statuss : Mass Production

    Jūs varētu arī interesēt
    • M378A1K43BB1-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CTD

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43CB2-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    • M378A1K43CB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    • M378A1K43CB2-CTD

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.